DESCRIPTION

The NE434S01 is a Hetero-Junction FET that uses the junction

between Si-doped AlGaAs and undoped InGaAs to create very

high mobility electrons. Its excellent low noise and high asso-

ciated gain make it suitable for TVRO and other commercial

systems.

PART NUMBER

NE434S01

PACKAGE OUTLINE

S01

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

µA

0.5

10

mA

20

80

150

µA,

V

-0.2

-0.9

-2.5

mS

70

85

dB

0.35

0.45

dB

13.0

15.5

NE434S01

FEATURES

• VERY LOW NOISE FIGURE:

0.35 dB TYP at 4 GHz

• HIGH ASSOCIATED GAIN:

15.5 dB TYP at 4 GHz

• GATE WIDTH: 280

µm

• TAPE & REEL PACKAGING OPTION AVAILABLE

• LOW COST PLASTIC PACKAGE

MAXIMUM AVAILABLE GAIN, FORWARD

INSERTION GAIN vs. FREQUENCY

Frequency, f (GHz)

C BAND SUPER LOW NOISE HJ FET

California Eastern Laboratories

24

20

16

12

8

4

12

4

6

8 10

14

20 30

MSG.

MAG.

PRELIMINARY DATA SHEET

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production

line as a "go-no-go" screening tuned for the "generic" type but not each specimen.

SYMBOLS

CHARACTERISTIC

UNITS

MIN TYP MAX

Drain to Source Voltage

V

2

2.5

Drain Current

mA

15

20

Input Power

dBM

0

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