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NE72218-T1 Datasheet(PDF) 1 Page - California Eastern Labs |
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NE72218-T1 Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 5 page PART NUMBER NE72218 PACKAGE OUTLINE 18 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX Gs Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz dB 5.0 P1dB Output Power at 1 dB Gain Compression Point at VDS = 3 V, ID = 30 mA, f = 12 GHz dBm 15.0 PN Phase Noise at VDS = 3 V, ID = 30 mA, f = 11 GHz, 100 KHz offset dBc/Hz -110 Phase Noise at VDS = 3 V, ID = 30 mA, f = 11 GHz, 10 KHz offset dBc/Hz -90 gm Transconductance at VDS = 3 V, ID = 30 mA mS 20 45 IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 V mA 30 60 120 VGS (OFF) Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA V -0.5 -2.0 -4.0 IGSO Gate to Source Leakage Current at VGS = -5 V µA 1.0 10 NE72218 C TO X BAND N-CHANNEL GaAs MESFET • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz • GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm • 4 PIN SUPER MINI MOLD: (SOT-343) • TAPE & REEL PACKAGING FEATURES PACKAGE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 ELECTRICAL CHARACTERISTICS (TA = 25°C) PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain California Eastern Laboratories DESCRIPTION The NE72218 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for im- proved RF and DC performance, reliability and uniformity. The NE72218 is housed in a 4 pin super mini mold package, making it ideal for high density design. NEC's stringent quality assurance and test procedures ensure the highest reliability performance. 2.1 ± 0.2 1.25 ± 0.1 1 2 3 0.3 0.3 0.9 ± 0.1 0 to 0.1 0.15 +0.10 -0.05 2.0 ± 0.2 4 0.4 +0.10 -0.05 1.3 +0.10 -0.05 0.65 0.65 0.60 0.65 1.25 |
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