PART NUMBER

NE6500496

SYMBOLS

CHARACTERISTICS

UNITS

MIN

TYP

MAX

TEST CONDITIONS

Power Out at Fixed Input Power

dBm

35.5

36.0

Linear Gain

dB

11.0

11.5

Power Added Efficiency

%

45

Ω

Drain Source Current

A

0.8

Saturated Drain Current

A

1.0

2.3

3.5

Pinch-off Voltage

V

-3.5

-2.0

-0.5

Transconductance

mS

1300

Thermal Resistance

°C/W

5.0

6.0

Channel to Case

FEATURES

• HIGH OUTPUT POWER: 4 W

• HIGH LINEAR GAIN: 11.5 dB

• HIGH EFFICIENCY (PAE): 45%

• INDUSTRY STANDARD PACKAGING

California Eastern Laboratories

L&S BAND MEDIUM POWER GaAs MESFET

ABSOLUTE MAXIMUM RATINGS

°C unless otherwise noted)

SYMBOLS

PARAMETERS

UNITS

RATINGS

Drain to Source Voltage

V

15

Gate to Drain Voltage

V

-18

Gate to Source Voltage

V

-12

Drain Current

A

4.5

Gate Current

mA

25

Total Power Dissipation

W

25

Channel Temperature

°C

175

Storage Temperature

°C

-65 to +175

NE6500496

SYMBOLS

PARAMETERS

UNITS MIN

TYP MAX

Drain to Source Voltage

V

10

10

Channel Temperature

°C

130

Gain Compression

dB

3.0

Gate Resistance

Ω

200

RECOMMENDED OPERATING LIMITS

DESCRIPTION

The NE6500496 is a medium power GaAs MESFET designed

for up to a 4 W output stage or as a driver for high power

devices. The device has no internal matching and can be used

from UHF frequencies up to 3.0 GHz. The chips used in this

series offer superior reliability and consistent performance for

which NEC microwave semiconductors are known.

The NE6500496 Transistors are manufactured to NEC's strin-

gent quality assurance standards to ensure highest reliability

and consistent superior performance.

PACKAGE OUTLINE 96

4.0 MIN BOTH LEADS

1.0

±0.1

φ2.2±0.2

4.0

±0.1

4.3

±0.2

5.2

±0.3

0.6

±0.1

11.0

±0.15

15.0

±0.3

0.1

0.2 MAX

1.7

±0.15

6.0

±0.2

1.2

5.0 MAX

5.2

±0.3

+.06

-.02

Gate

Drain

Source