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STT3930N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT3930N
Description  N-Channel Enhancement Mode MOSFET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT3930N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changes of specification will not be informed individually.
Elektronische Bauelemente
STT3930N
3.5A , 30V , RDS(ON) 58mΩ
N-Channel Enhancement Mode MOSFET
25-Nov-2013 Rev. A
Page 1 of 2
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TSOP-6
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
Leader Size
TSOP-6
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
3.5
Continuous Drain Current
1
TA=70°C
ID
2.8
A
Pulsed Drain Current
2
IDM
16
A
Continuous Source Current (Diode Conduction)
1
IS
1.25
A
TA=25°C
1.3
Power Dissipation
1
TA=70°C
PD
0.8
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
t ≦ 10 sec
100
Maximum Junction to Ambient
1
Steady State
RθJA
166
°C / W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
0
0.10
B
2.60
3.00
H
0.60 REF.
C
1.40
1.80
J
0.12 REF.
D
1.10 MAX.
K
10°
E
1.90 REF.
L
0.95 REF.
F
0.30
0.50
TSOP-6
B
L
F
H
C
J
D G
K
A
E
1
2
3
4
5
6
G
G
S
S
D
D


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