SSD02N65SL datasheet(2/5 Pages) SECOS

Part #	SSD02N65SL

Description	N-Ch Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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2 / 5 page

Elektronische Bauelemente

SSD02N65SL

2A , 650V , RDS(ON) 4.8

N-Ch Enhancement Mode Power MOSFET

23-Dec -2013 Rev. A

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

650

-

V

VGS=0, ID= 250µA

Gate-Threshold Voltage

VGS(th)

2

-

4

V

VDS=VGS, ID=250µA

Gate-Source Leakage Current

IGSS

-

±100

nA

VGS= ±30V

Drain-Source Leakage Current

IDSS

-

1

µA

VDS=650V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

-

4.3

4.8

VGS=10V, ID=1A

Total Gate Charge

1.2

Qg

-

5.83

-

Gate-Source Charge

1.2

Qgs

-

1.73

-

Gate-Drain Change

1.2

Qgd

-

2

-

nC

ID=2A

VDS=520V

VGS=10V

Turn-on Delay Time

1.2

Td(on)

-

10.67

-

Rise Time

1.2

Tr

-

20

-

Turn-off Delay Time

1.2

Td(off)

-

12.4

-

Fall Time

1.2

Tf

-

18

-

nS

VDD=325V

ID=2A

RG=25

Input Capacitance

Ciss

-

261.8

-

Output Capacitance

Coss

-

34.3

-

Reverse Transfer Capacitance

Crss

-

1.3

-

pF

VGS =0

VDS=25V

f =1.0MHz

Source-Drain Diode

Diode Forward Voltage

VSD

-

1.4

V

IS=2A, VGS=0

Continuous Source Current

IS

-

2

A

Pulsed Source Current

ISM

-

8

A

Integral Reverse P-N

Junction Diode in the

MOSFET

Reverse Recovery Time

Trr

-

368.88

-

ns

Reverse Recovery Charge

Qrr

-

1.08

-

µC

IS=2A,VGS=0,

dlF/dt=100A/µS

Notes:

1.

Pulse Test: Pulse width ≦300µS, Duty cycle≦2%

2.

Essentially independent of operating temperature.

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