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CN8K Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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CN8K Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page CN8A - CN8M CELL RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Chip form MECHANICAL DATA : * Case : C8A * Terminals : Solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Cathode to bigger size slug, For Anode to bigger size slug use "R" suffix. * Mounting position : Any * Weight : 0.25 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL CN8A CN8B CN8D CN8G CN8J CN8K CN8M UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 75 °C IF(AV) 8.0 Amps. Peak Forward Surge Current Single half sine wave superimposed on rated load (JEDEC Method) IFSM 300 Amps. Maximum Forward Voltage at IF = 8 Amps. VF 1.1 Volts Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 1.0 mA Typical Junction Capacitance (Note 1) CJ 300 pF Thermal Resistance, Junction to Case R θJC 10 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Note : (1) Measured at 1.0 MHz and applied reverse Voltage of 4.0 VDC UPDATE : APRIL 23, 1998 RATING 1.40 5.47 4.82 0.51 0.38 Dimensions in millimeter C8A Anode Cathode |
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