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2N7002DW Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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2N7002DW Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 5 page PAGE . 1 REV.0.0-AUG.4.2008 2N7002DW MECHANICALDATA • Case: SOT-363 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Apporx. Weight: 0.0002 ounces , 0.006grams • Marking : 702 60V N-Channel Enhancement Mode MOSFET Maximum RATINGS and Thermal Characteristics (T A=25 O C unless otherwise noted ) Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE R E T E M A R A Pl o b m y Sti m i Ls ti n U e g a tl o V e c r u o S - n i a r DV S D 0 6V e g a tl o V e c r u o S - e t a GV S G + 0 2V t n e r r u C n i a r D s u o u n it n o CI D 5 1 1A m t n e r r u C n i a r D d e s l u P ) 1 I M D 0 0 8A m n o it a p i s s i D r e w o P m u m i x a M T A 5 2 = O C T A 5 7 = O C P D 0 0 2 0 2 1 W m e r u t a r e p m e T e g a r o t S d n a n o it c n u J g n it a r e p O e g n a R T J T , G T S 0 5 1 + o t 5 5 - O C ) d e t n u o m B C P ( e c n a t s i s e R l a m r e h T t n e i b m A o t- n o it c n u J 2 R θ A J 5 2 6 O W / C FEATURES • R DS(ON), VGS@10V,IDS@500mA=5Ω • R DS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • 0.012(0.30) 0.005(0.15) 0.010(0.25) Unit inch(mm) : SOT-363 0.054(1.35) 0.045(1.15) 0.087(2.20) 0.074(1.90) 0.030(0.75) 0.021(0.55) 0.056(1.40) 0.047(1.20) 0.010(0.25) 0.003(0.08) |
Similar Part No. - 2N7002DW_14 |
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Similar Description - 2N7002DW_14 |
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