XT2116-1401 datasheet(2/4 Pages) DYNEX

Part #	XT2116-1401

Description	Fast Turn-on Asymmetric Thyristor

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Manufacturer	DYNEX [Dynex Semiconductor]

Direct Link	http://www.dynexsemi.com

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XT2116

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SURGE RATINGS

Conditions

Max.

Units

Symbol

Parameter

I

TSM

Surge (non-repetitive) forward current

I

2tI2t for fusing

3200

A2s

800

A

10ms half sine; T

case = 125

oC

THERMAL AND MECHANICAL DATA

Conditions

Min.

Max.

Units

Thermal resistance - junction to case

R

th(j-c)

Symbol

Parameter

d.c.

-

0.35

oC/W

Mounting torque 3.5Nm

with mounting compound

Thermal resistance - case to heatsink

R

th(c-h)

0.25

-

oC/W

T

vj

Virtual junction temperature

On-state (conducting)

-

125

oC

T

stg

Storage temperature range

-

3.5*

-55

125

oC

Mounting torque

4.0

Nm

DYNAMIC CHARACTERISTICS

V

TM

Parameter

Symbol

Conditions

Maximum on-state voltage

At I

T = 100A

I

RRM/IDRM

Peak reverse and off-state current

At V

RRM/VDRM

Half sine wave of 2

µs, T

j = 125˚C

Gate source 20V, 10

Ω. t

r = 160ns

dV/dt

Maximum linear rate of rise of off-state voltage

T

j = 125

oC, To V

DRM, RGK = 47Ω

Typ.

Max.

Units

-V

-

10/10

mA

-

300

V/

µs

-

2000

A/

µs

Rate of rise of on-state current

dI/dt

Latching current

-

I

L

45

-

mA

I

H

Holding current

-

t

d

Delay time

V

D = 400V, gate source = 500mA, tr = 50ns

35

-

mA

-

250

ns

I

T = 25A, VRM = 0V, VDR = VDWM, Tcase =120˚C,

R

GK = 47Ω, dV/dt = 100V/µs.

µs

120†

-

Circuit commutated turn-off time

t

q

2.0

† Available to 10

µs.

T

case

= 25˚C unless otherwise stated.

* Recommended value.

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XT2116-1401 Datasheet(PDF) 2 Page - Dynex Semiconductor

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