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STB170NF04 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB170NF04 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 15 page STB170NF04 Electrical ratings Doc ID 15591 Rev 2 3/15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C dv/dt (3) 3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX Peak diode recovery voltage slope 8 V/ns EAS (4) 4. Starting Tj = 25 °C, ID = 40 A, VDD = 30 V Single pulse avalanche energy 1.5 J Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-pcb(1) 1. When mounted on 1 inch² FR4 2 oz Cu Thermal resistance junction-pcb max 35 °C/W |
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