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MP04TT500-27-W2 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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MP04TT500-27-W2 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 10 page MP04TT500 4/10 www.dynexsemi.com 20 15 10 5 0 110 1 2 3 4 5 50 ms Cycles at 50Hz Duration 250 300 I2t I2t = Î2 x t 2 350 25 400 10 20 30 Fig. 6 Transient thermal impedance - dc Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% V RSM at T case = 125˚C) Fig. 5 Gate characteristics 0.5 1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V) 0 500 1000 1500 2000 2500 1 2 1: Tj = 125˚C Min 2: Tj = 125˚C Max Measured under pulse conditions 10 1 0.1 0.01 0.001 Gate trigger current, IGT - (A) 100 10 1 0.1 Region of certain triggering Upper limit 99% Lower limit 99% VGD IFGM Table gives pulse power PGM in Watts Pulse width µs 100 200 500 1ms 10ms Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - 0 0.02 0.04 0.06 0.08 0.1 0.12 0.001 0.01 0.1 1 10 100 1000 Time (Seconds) |
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