2SC5432 datasheet(2/8 Pages) NEC

Part #	2SC5432

Description	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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Manufacturer	NEC [NEC]

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2SC5432

2

Preliminary Data Sheet

hFE CLASSIFICATION

RANK

EB

FB

Marking

TC

TD

hFE

80 to 110

100 to 145

TYPICAL CHARACTERISTICS (TA = 25

°C)

COLLECTOR CURRENT vs. DC BASE VOLTAGE

20

0

10

1.0

0.5

VBE - DC Base Voltage - V

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

150

0

50

TA - Ambient Temperature - °C

150

100

50

100

DC CURRENT GAIN vs. COLLECTOR CURRENT

IC - Collector Current - mA

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

25

VCE - Collector to Emitter Voltage - V

20

15

10

5

Free Air

VCE = 3 V

200

0.5

10

50

5

25

0

510

20

15

10

5

IB = 160 A

µ

140 A

120 A

100 A

80 A

60 A

40 A

20 A

20

10

2

1

100

20

50

VCE = 3 V

µ

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