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MP03TT580-17 Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # MP03TT580-17
Description  Dual Thyristor Water Cooled Welding Module Preliminary Information
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

MP03TT580-17 Datasheet(HTML) 3 Page - Dynex Semiconductor

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MP03TT580
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Units
mA
V/
µs
A/
µs
V
m
Test Conditions
At V
RRM/VDRM, Tj = 125˚C
To 67% V
DRM, Tj = 125˚C
From 67% V
DRM to 500A, gate source 10V, 5Ω
t
r = 0.5µs, Tj = 125˚C
At T
vj = 125˚C
At T
vj = 125˚C
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS
Symbol
I
RRM/IDRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
300
1000
150
0.98
0.75
Min.
-
-
-
-
-
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM = 5V, Tcase = 25
oC
V
DRM = 5V,
T
case = 25
oC
At V
DRM Tcase = 125
oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
Note : The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.


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