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MP02TT200-14 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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MP02TT200-14 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 9 page MP02TT200 4/9 www.dynexsemi.com Fig. 3 Maximum (limit) on-state characteristics 1 10 1 2 3 4 5 50 0 5 10 15 Duration 60 100 140 ms cycles at 50Hz 180 I2t 20 10 20 30 Fig. 6 Transient thermal impedance - dc Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% V RSM at T case = 125˚C) Fig. 5 Gate characteristics 0.5 1.0 2.0 Instantaneous on-state voltage, VT - (V) 0 500 1000 1500 2000 Measured under pulse conditions Tj = 125˚C 1.5 2.5 100 10 1.0 0.1 0.001 0.01 0.1 1.0 10 Gate trigger current, IGT - (A) Tj = 125˚C Tj = 25˚C Upper limit 99% Lower li mit 1% VFGM VGD IFGM 5W 10W 50W 75W 100W Pulse Width µs 20 25 100 500 1ms 10ms 50 100 100 100 100 100 10 100 100 100 100 100 50 - 400 100 100 100 25 - - Pulse Frequency Hz Table gives pulse power PGM in watts 10 1 0.1 1000 100 0.01 0.001 Time - (s) 1.0 0.1 0.01 0.001 |
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