GP1600FSM12 datasheet(4/10 Pages) DYNEX

Part #	GP1600FSM12

Description	Single Switch IGBT Module Advance Information

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Manufacturer	DYNEX [Dynex Semiconductor]

Direct Link	http://www.dynexsemi.com

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4 / 10 page

GP1600FSM12

4/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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INDUCTIVE SWITCHING CHARACTERISTICS

Symbol

t

d(off)

Turn-off delay time

Fall time

E

OFF

Turn-off energy loss

Conditions

ns

mJ

1800

250

450

350

200

-

Parameter

Min.

Typ.

Max.

Units

1650

t

f

t

d(on)

Turn-on delay time

ns

1750

-

1600

Rise time

E

ON

Turn-on energy loss

ns

mJ

550

200

160

450

-

t

r

I

C = 1600A

V

GE = ±15V

V

CE = 600

R

G(ON) = RG(OFF) = 3.3Ω

L ~ 100nH

T

case =

125˚C unless stated otherwise.

T

case = 25˚C unless stated otherwise

Q

rr

Diode reverse recovery charge

µC

130

100

-

Q

rr

Diode reverse recovery charge

µC

-

170

-

I

F = 1600A

V

R = 50%VCES,

dI

F/dt = 2000A/µs

t

d(off)

Turn-off delay time

Fall time

E

OFF

Turn-off energy loss

ns

mJ

2100

300

500

400

250

-

1900

t

f

t

d(on)

Turn-on delay time

ns

2000

-

1750

Rise time

E

ON

Turn-on energy loss

ns

mJ

550

350

250

500

-

t

r

I

C = 1600A

V

GE = ±15V

V

CE = 600

R

G(ON) = RG(OFF) = 3.3Ω

L ~ 100nH

Q

rr

Diode reverse recovery charge

µC

350

250

-

Q

rr

Diode reverse recovery charge

µC

-

225

-

I

F = 1600A

V

R = 50%VCES,

dI

F/dt = 2000A/µs

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