GP1200ESM33

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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www.dynexsemi.com

FEATURES

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High Thermal Cycling Capability

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Non Punch Through Silicon

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Isolated MMC Base with AlN Substrates

APPLICATIONS

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High Reliability Inverters

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Motor Controllers

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Traction Drives

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Resonant Converters

The Powerline range of high power modules includes dual

and single switch configurations covering voltages from 1200V to

3300V and currents up to 4800A.

The GP1200ESM33 is a single switch 3300V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) ensuring reliability in demanding applications.

This

device is optimised for traction drives and other applications

requiring high thermal cycling capability or very high reliability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

GP1200ESM33

Note: When ordering, please use the whole part number.

KEY PARAMETERS

V

CES

3300V

V

CE(sat)

(typ)

3.4V

I

C

(max)

1200A

I

C(PK)

(max)

2400A

GP1200ESM33

High Reliability Single Switch IGBT Module

Advance Information

Replaces July 2000 version, DS5308-1.6

DS5308-2.1 February 2001

Fig. 1 Single switch circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: E

(See package details for further information)

C2

C1

Aux C

G

Aux E

E1

E2

E3

External connection

External connection

C3