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DSF8045SK Datasheet(PDF) 1 Page - Dynex Semiconductor |
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DSF8045SK Datasheet(HTML) 1 Page - Dynex Semiconductor |
1 / 9 page DSF8045SK 1/9 APPLICATIONS s Snubber Diode For GTO Applications FEATURES s Double side cooling s High surge capability s Low recovery charge VOLTAGE RATINGS KEY PARAMETERS V RRM 4500V I F(AV) 430A I FSM 3500A Q r 440 µC t rr 3.07 µs 4500 4400 4300 4200 4100 4000 DSF8045SK45 DSF8045SK44 DSF8045SK43 DSF8045SK42 DSF8045SK41 DSF8045SK40 Conditions V RSM = V RRM + 100V Lower voltage grades available. Type Number Repetitive Peak Reverse Voltage V RRM V Outline type code: K. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Double Side Cooled I F(AV) Mean forward current I F(RMS) RMS value I F Continuous (direct) forward current Single Side Cooled (Anode side) I F(AV) Mean forward current I F(RMS) RMS value I F Continuous (direct) forward current Units Max. Half wave resistive load, T case = 65 oC 430 A T case = 65 oC 680 A T case = 65 oC 600 A Half wave resistive load, T case = 65 oC 285 A T case = 65 oC 445 A T case = 65 oC 380 A DSF8045SK Fast Recovery Diode Advance Information Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000 |
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