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2SD2153 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD2153 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente 2SD2153 2A , 30V NPN Plastic Encapsulated Transistor 20-Nov-2013 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package General Purpose Application CLASSIFICATION OF hFE(1) Product-Rank 2SD2153-U 2SD2153-V Range 560~1200 820~1800 MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 2 A Pulsed Collector Current 1 ICP 3 A Collector Power Dissipation PC 0.5 W Maximum Junction to Ambient RθJA 250 °C / W Junction & Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage V(BR)CBO 30 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 - - V IE=50µA, IC=0 Collector Cut-Off Current ICBO - - - 0.5 µA VCB=20V, IE=0 Emitter Cut-Off Current IEBO - - 0.5 µA VEB=5V, IC=0 DC Current Gain 1 hFE 560 - 1800 VCE=6V, IC=500mA Collector-Emitter Saturation voltage VCE(sat) - - 0.5 V IC=1A, IB=20mA Transition Frequency fT - 110 - MHz VCE=10V,IC=10mA,f=100MHz Collector Output Capacitance COB - 22 - pF VCB=10V, IE=0, f=1MHz Note: 1. Single pulse, PW=10mS Package MPQ Leader Size SOT-89 1K 7 inch SOT-89 A E C D B K H F G L J 1 2 3 4 B C E Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.25 2.60 K 0.32 0.52 E 1.50 1.85 L 0.35 0.44 F 0.89 1.20 DN |
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