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2SD669A Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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2SD669A Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
3 / 3 page Elektronische Bauelemente 10-Jul-2007 Rev. B Page 3 of 3 2S D669/2SD669A NPN Type Plastic Encapsulate Transistors 1.2 1.0 0.8 0.6 0.4 0 0.2 1 3 30 300 10 100 1,000 Base to Emitter Saturation Voltage vs. Collector Current Collector current IC (mA) IC = 10 IB 75 25 TC = –25 °C 240 200 160 120 80 40 0 10 300 1,000 100 30 Collector current IC (mA) Gain Bandwidth Product vs. Collector Current VCE = 5 V Ta = 25 °C 200 100 50 20 10 5 2 110 50 20 5 2 Collector to base voltage VCB (V) 100 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual |
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