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DS2103SY21 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DS2103SY21 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 7 page 4/7 www.dynexsemi.com DS2103SY CHARACTERISTICS Forward voltage Peak reverse current Parameter µC 3000 At T vj = 175˚C - Q S Total stored charge I F = 2000A, dIRR/dt = 3A/µs T case = 175˚C, VR = 100V Symbol V FM I RM I rr Peak reverse recovery current V TO Threshold voltage r T Slope resistance 0.063 m Ω At T vj = 175˚C - 0.75 V - 125 A - At V RRM, Tcase = 175 oC - 150 mA - 1.05 V At 3000A peak, T case = 25 oC Conditions Min. Max. Units CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Dissipation curves V FM Equation:- V FM = A + Bln (I F ) + C.I F +D. √I F Where A = –0.51826 B = 0.195881 C = 6.39 x 10–5 D = –0.00544 these values are valid for T j = 125˚C for I F 500A to 9000A 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.0 1.5 Instantaneous forward voltage, VF - (V) 0 2000 4000 6000 8000 10000 Measured under pulse conditions Tj = 175˚C 0 2000 4000 6000 8000 Mean forward current, IF(AV) - (A) 0 2000 4000 6000 8000 10000 12000 10000 dc Half wave 3 phase 6 phase |
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