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DS2103SY24 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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DS2103SY24 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 7 page 5/7 www.dynexsemi.com DS2103SY Fig.4 Total stored charge and maximum reverse recovery current Fig.6 Maximum (limit) transient thermal impedance - junction to case Fig.5 Surge (non-repetitive) forward current vs time (with 50% V RRM at T case 175˚C) 0.1 1.0 10 100 Rate of decay of forward current, dI/dt - (A/µs) 100000 10000 1000 Conditions: Tj = 175˚C VR = 100V IF = 2000A 1000 100 10 Max. QS Max. Irr IRM IF dIF/dt QS 1 101 2 3 510 20 50 20 40 60 80 100 120 140 10 15 5 0 20 25 ms Cycles at 50Hz Duration I2t = Î2 x t 2 I2t 10 1 0.1 0.01 0.001 Time - (s) 0.1 0.01 0.001 0.0001 Double side cooled Anode side cooled 100 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 Single side 0.019 0.020 0.0207 0.0234 |
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