Electronic Components Datasheet Search |
|
SI4842BDY Datasheet(PDF) 4 Page - Vishay Siliconix |
|
SI4842BDY Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 73532 S09-0228-Rev. C, 09-Feb-09 Vishay Siliconix Si4842BDY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C 1.000 10.000 100.000 0.100 0.010 0.001 - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 01 23 45 6 7 8 910 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C 0.000 0.006 0.012 0.018 0.024 0.030 0 120 200 40 80 Time (s) 160 1 10 0.1 0.01 0.001 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 1 ms TA = 25 °C Single Pulse 10 ms 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 1 s 10 s Limited by RDS(on)* |
Similar Part No. - SI4842BDY |
|
Similar Description - SI4842BDY |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |