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Document Number: 73532

S09-0228-Rev. C, 09-Feb-09

Vishay Siliconix

Si4842BDY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

0.0

0.2

0.4

0.6

0.8

1.000

10.000

100.000

0.100

0.010

0.001

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

01

23

45

6

7

8

910

0.000

0.006

0.012

0.018

0.024

0.030

0

120

200

40

80

Time (s)

160

1

10

0.1

0.01

0.001

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

1 ms

Single Pulse

10 ms

100 ms

DC

1 s

10 s