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DFM900FXM18-A000 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DFM900FXM18-A000 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 7 page DFM900FXM18-A000 4/7 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig. 2 Diode typical forward characteristics Fig. 4 Transient thermal impedance Fig. 5 Power dissipation Fig. 6DC current rating vs case temperature 0 300 600 900 1200 1500 1800 2100 2400 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Foward voltage, VF - (V) Tj = 125˚C Tj = 25˚C 1 10 100 0.001 0.01 1 0.1 10 Pulse width, tp - (s) Ri (˚C/KW) τ i (ms) 1 1.081 0.0066332 2 3.7409 1.4384 3 4.7184 12.8758 4 17.5092 110.2138 0 1000 2000 3000 4000 0 20 40 60 80 100 120 140 160 Case temperature, Tcase - (˚C) 0 200 400 600 800 1000 1200 1300 100 300 500 700 900 1100 0 20 406080 100 120 140 160 Case temperature, Tcase - (˚C) |
Similar Part No. - DFM900FXM18-A000 |
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Similar Description - DFM900FXM18-A000 |
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