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NTMS4107NR2G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTMS4107NR2G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTMS4107N http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 21 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = $20 V $100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 7.4 mV/ °C Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 14 A 4.7 5.5 m W VGS = 10 V, ID = 15 A 3.4 4.5 Forward Transconductance gFS VDS = 15 V, ID = 18 A 25 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = 15 V 6000 pF Output Capacitance COSS 1030 Reverse Transfer Capacitance CRSS 550 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V, ID = 18 A 45 nC Threshold Gate Charge QG(TH) 6.5 Gate−to−Source Charge QGS 16.3 Gate−to−Drain Charge QGD 19.3 Gate Resistance RG 0.60 W SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(ON) VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 9.0 ns Rise Time tr 10 Turn−Off Delay Time td(OFF) 94 Fall Time tf 38 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 3.0 A TJ = 25°C 0.8 1.1 V TJ = 125°C 0.6 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 3.0 A 41 ns Charge Time ta 20 Discharge Time tb 21 Reverse Recovery Charge QRR 48 nC 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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