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DFM1200NXM33-A000 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DFM1200NXM33-A000 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 7 page DFM1200NXM33-A000 4/7 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig. 2 Diode typical forward characteristics Fig. 4 Transient thermal impedance Fig. 5 Power dissipation Fig. 6 DC current rating vs case temperature 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward voltage, VF - (V) Tj = 25˚C Tj = 125˚C 0.1 1 10 100 0.001 0.01 1 0.1 10 Pulse width, tp - (s) Diode Ri (˚C/KW) τ i (ms) 1 0.4646 0.0843 2 2.46 3.7205 3 3.4987 33.2138 4 10.5854 236.5275 Diode 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 0 25 50 75 100 125 150 Case temperature, Tcase - (°C) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 25 50 75 100 125 150 Case temperature, Tcase - (°C) |
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