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DCR840F48 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DCR840F48 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 9 page 3/9 www.dynexsemi.com DCR840F SURGE RATINGS Conditions 10ms half sine; T case = 125 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case = 125 oC V R = 0 Max. Units Symbol Parameter I TSM Surge (non-repetitive) on-state current I 2tI2t for fusing I TSM Surge (non-repetitive) on-state current I 2t I 2t for fusing 0.78 x 10 6 A 2s 12.5 kA 0.5 x 106 A2s 10 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.038 Anode dc Clamping force 19.5kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.004 Double side - 125 oC T vj Virtual junction temperature T stg Storage temperature range Reverse (blocking) Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Clamping force 18.0 22.0 kN –55 125 oC - On-state (conducting) - 135 oC - 0.008 oC/W oC/W Cathode dc - 0.052 oC/W Double side cooled - 0.022 oC/W |
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