2SC5180 datasheet(3/8 Pages) NEC

Part #	2SC5180

Description	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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Manufacturer	NEC [NEC]

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2SC5180

CHARACTERISTICS CURVES (TA = 25

°C)

25

0

20

15

10

5

1.0

2.0

3.0

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

VCE – Collector to Emitter Voltage – V

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

0

50

200

100

0

50

100

150

40

30

20

10

0.5

1.0

TA – Ambient Temperature – °C

VBE – Base to Emitter Voltage – V

VCE = 2 V

30 mW

IB = 20 A

µ

40 A

µ

60 A

µ

80 A

µ

100 A

µ

120 A

µ

140 A

µ

160 A

µ

180 A

µ

200 A

µ

Passive

air cooling

GAIN BAND WIDTH PRODUCT

vs. COLLECTOR CURRENT

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

1

14

18

1

2

5

10

12

10

8

6

2

10

IC – Collector Current – mA

16

14

12

10

8

6

4

f = 2 GHz

4

5

VCE = 2 V

VCE = 1 V

f = 2 GHz

2 V

VCE = 1 V

IC – Collector Current – mA

DC CURRENT GAIN vs.

COLLECTOR CURRENT

500

200

100

10

20

50

1

2

5

10

20

50

100

VCE = 1 V

VCE = 2 V

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