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DCR1675SZ Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR1675SZ Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 8 page 6/8 www.dynexsemi.com DCR1675SZ Fig.6 Transient thermal impedance - junction to case Fig.4 Stored charge Fig.5 Gate characteristics Fig.7 Surge (non-repetitive) on-state current vs time (with 50% V RRM at T case = 125˚C) 100 10 1 0.1 0.001 0.1 0.01 1.0 10 VFGM Lower Lim it 1% Upper Limit 99% Tj = 25˚C VGD Gate trigger current, IGT - (A) 100W 50W 20W 10W IGD IFGM Table gives pulse power PGM in Watts Pulse Width µs 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - Frequency Hz 10 1 0.1 0.01 0.001 Time - (s) 0.1 0.01 0.001 0.0001 Double side cooled Anode side cooled 100 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.0065 0.0072 0.0073 0.0076 Anode side 0.0130 0.0137 0.0138 0.0141 0.1 1.0 10 100 Rate of decay of on-state current dI/dt - (A/µs) 100000 10000 1000 Tj = 125˚C IT = 600A IRM QS tp = 3ms IT dI/dt 100 75 50 25 0 110 1 2 3 45 50 ms Cycles at 50Hz Duration 0 7.5 I2t I2t = Î2 x t 2 125 10 20 30 5.0 2.5 10.0 12.5 |
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