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DCR1376SBA Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DCR1376SBA Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 8 page 4/8 www.dynexsemi.com DCR1376SBA GATE TRIGGER CHARACTERISTICS AND RATINGS V DRM = 5V, T case = 25 oC Conditions Parameter Symbol V GT Gate trigger voltage V DRM = 5V, Tcase = 25 oC I GT Gate trigger current V GD Gate non-trigger voltage At V DRM Tcase = 125 oC V FGM Peak forward gate voltage Anode positive with respect to cathode V FGN Peak forward gate voltage Anode negative with respect to cathode V RGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode P GM Peak gate power See table Fig.5 P G(AV) Mean gate power 3.0 V 350 mA 0.25 V 30 V 0.25 V 5V 10 A 150 W 10 W Max. Units DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Typ. Max. Units I RRM/IDRM Peak reverse and off-state current At V RRM/VDRM, Tcase = 125 oC From 67% V DRM to 2800A Gate source 20V, 20 Ω t r ≤ 1.0µs. Tj = 125 oC. dV/dt Maximum linear rate of rise of off-state voltage To 67% V DRM Tj = 125 oC. - 150 mA - 1000 V/ µs Repetitive 50Hz - 150 A/ µs Non-repetitive - 300 A/ µs Rate of rise of on-state current dI/dt V T(TO) Threshold voltage At T vj = 125 oC r T On-state slope resistance At T vj = 125 oC t gd Delay time 1.1 -V - 0.39 m Ω - 1.5 ns V D = 67% VDRM, Gate source 30V, 15Ω Rise time 0.5 µs, T j = 25 oC I T = 800A, tp = 1ms, Tj = 125˚C, V R = 50V, dIRR/dt = 20A/µs, V DR = 67% VDRM, dVDR/dt = 20V/µs linear µs - 550 Turn-off time t q I L Latching current T j = 25 oC, V D = 5V I H Holding current T j = 25 oC, V G-K = ∞ - 400 mA - 200 mA |
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