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DCR1375SBA Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DCR1375SBA Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 8 page 3/8 DCR1375SBA www.dynexsemi.com SURGE RATINGS Conditions 10ms half sine; T case = 125 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case = 125 oC V R = 0 Max. Units Symbol Parameter I TSM Surge (non-repetitive) on-state current I 2tI2t for fusing I TSM Surge (non-repetitive) on-state current I 2t I 2t for fusing 6.125 x 10 6 A 2s 35 kA 3.92 x 106 A2s 28 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.021 Anode dc Clamping force 40kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.003 Double side - 125 oC T vj Virtual junction temperature T stg Storage temperature range Reverse (blocking) Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Clamping force 36.0 44.0 kN –55 125 oC - On-state (conducting) - 135 oC - 0.006 oC/W oC/W Cathode dc - 0.034 oC/W Double side cooled - 0.013 oC/W |
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