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DCR1279SD Datasheet(PDF) 3 Page - Dynex Semiconductor

Part No. DCR1279SD
Description  Phase Control Thyristor
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Maker  DYNEX [Dynex Semiconductor]
Homepage  http://www.dynexsemi.com
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DCR1279SD
3/9
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
Typ.
Max.
Units
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM = 5V,
T
case = 25
oC
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM = 5V, Tcase = 25
oC
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM Tcase = 125
oC
4.0
V
400
mA
0.25
V
Max.
Units
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See table, fig.4
P
G(AV)
Mean gate power
30
V
0.25
V
5V
10
A
150
W
5W
I
RRM/IDRM
Peak reverse and off-state current
At V
RRM/VDRM, Tcase = 125
oC
From 67% V
DRM
to 1000A
Gate source 10V, 5
t
r ≤ 0.5µs, Tj = 125
oC
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM Tj = 125
oC. Gate open circuit.
-
150
mA
-
300
V/
µs
Repetitive 50Hz
-
100
A/
µs
Non-repetitive
-
200
A/
µs
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj = 125
oC
r
T
On-state slope resistance
At T
vj = 125
oC
t
gd
Delay time
1.14
-V
-
0.587
m
-
2.5
µs
V
D = 67% VDRM, Gate source 30V, 15Ω
t
r = 0.5µs, Tj = 25
oC
I
L
Latching current
T
j = 25
oC, V
D = 5V
I
H
Holding current
T
j = 25
oC, R
g-k = ∞
300
1000
mA
-
500
mA




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