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TB1800L-13 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # TB1800L-13
Description  30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

TB1800L-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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DS30359 Rev. 2 - 1
2 of 4
TB0640L - TB3500L
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
VDRM
Breakover
Voltage
On-State
Voltage
@ IT = 1A
Breakover
Current
IBO
Holding Current
IH
Off-State
Capacitance
Marking
Code
VDRM (V)
IDRM (uA)
VBO (V)
VT (V)
Min
(mA)
Max (mA)
Min
(mA)
Max (mA)
CO (pF)
TB0640L
58
5
77
3.5
50
800
150
800
100
T064L
TB0720L
65
5
88
3.5
50
800
150
800
100
T072L
TB0900L
75
5
98
3.5
50
800
150
800
100
T090L
TB1100L
90
5
130
3.5
50
800
150
800
60
T110L
TB1300L
120
5
160
3.5
50
800
150
800
60
T130L
TB1500L
140
5
180
3.5
50
800
150
800
60
T150L
TB1800L
160
5
220
3.5
50
800
150
800
60
T180L
TB2300L
190
5
265
3.5
50
800
150
800
40
T230L
TB2600L
220
5
300
3.5
50
800
150
800
40
T260L
TB3100L
275
5
350
3.5
50
800
150
800
40
T310L
TB3500L
320
5
400
3.5
50
800
150
800
40
T350L
Symbol
Parameter
VDRM
Stand-off Voltage
IDRM
Leakage current at stand-off voltage
VBR
Breakdown voltage
IBR
Breakdown current
VBO
Breakover voltage
IBO
Breakover current
IH
Holding current
NOTE: 1
VT
On state voltage
IPP
Peak pulse current
CO
Off-state capacitance
NOTE: 2
Notes:
1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
UNDER DEVELOPMENT


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