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IRFR3704TRLPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFR3704TRLPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFR/U3704PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min Typ Max Units V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C ––– 7.3 9.5 ––– 11 14 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V ––– ––– 10 ––– ––– 100 Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min Typ Max Units gfs Forward Transconductance 42 ––– ––– S Qg Total Gate Charge ––– 19 ––– Qgs Gate-to-Source Charge ––– 8.1 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 6.4 ––– QOSS Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V RG Gate Resistance 0.3 ––– 3.2 Ω td(on) Turn-On Delay Time ––– 8.4 ––– tr Rise Time ––– 98 ––– td(off) Turn-Off Delay Time ––– 12 ––– ns tf Fall Time ––– 5.0 ––– Ciss Input Capacitance ––– 1996 ––– Coss Output Capacitance ––– 1085 ––– Crss Reverse Transfer Capacitance ––– 155 ––– Avalanche Characteristics Symbol Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Diode Characteristics Symbol Parameter Min Typ Max Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD ––– 0.88 1.3 ––– 0.82 ––– trr Reverse Recovery Time ––– 38 57 ns Qrr Reverse Recovery Charge ––– 45 68 nC trr Reverse Recovery Time ––– 41 62 ns Qrr Reverse Recovery Charge ––– 50 75 nC pF A Diode Forward Voltage V ––– ––– 75 f ––– ––– 300 m Ω µA nA VGS = 4.5V, ID = 12A e VDS = VGS, ID = 250µA VDS = 20V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V TJ = 125°C, IF = 35.5A, VR= 20V di/dt = 100A/µs e TJ = 125°C, IS = 35.5A, VGS = 0V e Conditions showing the integral reverse p-n junction diode. TJ = 25°C, IS = 35.5A, VGS = 0V e TJ = 25°C, IF = 35.5A, VR = 20V di/dt = 100A/µs e ƒ = 1.0MHz 216 71 MOSFET symbol Max Typ ––– ––– Conditions VDS = 25V, ID = 57A ID = 28.4A VDS = 10V VGS = 4.5V e VGS = 0V VDS = 10V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A e VGS = 4.5V e VDD = 10V ID = 28.4A RG = 1.8Ω RDS(on) IDSS IGSS Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current |
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