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2SC4957 Datasheet(PDF) 2 Page - NEC

Part No. 2SC4957
Description  HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2
2SC4957
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
ICBO
0.1
µAVCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
µAVEB = 1 V, IC = 0
DC Current Gain
hFE
75
150
VCE = 3 V, IC = 10 mA*1
Gain Bandwidth Product
fT
12
GHz
VCE = 3 V, IC = 10 mA
Feed-back Capacitance
Cre
0.3
0.5
pF
VCB = 3 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
911
dB
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF
1.5
2.5
dB
VCE = 3 V, IC = 3 mA, f = 2.0 GH
*1
Pulse Measurement; PW
≤ 350
µs, Duty Cycle ≤ 2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
T83
Marking
T83
hFE
75 to 150
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
TA – Ambient Temperature – ˚C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VBE – Base to Emitter Voltage – V
VCE = 3 V
Free Air
50
200
100
0
50
100
150
40
30
20
10
0
0.5
1.0
VCE = 3 V
180 mW




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