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MTP3413N3 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTP3413N3
Description  P-Channel Logic Level Enhancement Mode MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTP3413N3 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date : 2014.03.04
Page No. : 4/9
MTP3413N3
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
5
10
15
20
0
1
23
45
-VDS, Drain-Source Voltage(V)
-VGS=1.5V
-VGS=1.8V
5V
4.5V
4V
3.5V
3V
2.5V
Brekdown Voltage vs Ambient Temperature
20
22
24
26
28
30
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
VGS=-10V
VGS=-1.8V
VGS=-4.5V
VGS=-2.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02
46
8
1
-IDR, Reverse Drain Current (A)
0
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
20
40
60
80
100
120
140
160
180
200
02
46
8
10
Drain-Source On-State Resistance vs Junction Tempearture
20
30
40
50
60
70
80
90
100
-60
-20
20
60
100
140
180
Tj, Junction Temperature(°C)
VGS=-1.8V, ID=-2A
VGS=-4.5V, ID=-4.3A
VGS=-2.5V, ID=-2.5A
-VGS, Gate-Source Voltage(V)
ID=-4.3A
ID=-2.5A
ID=-0.2A


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