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MTE05N08E3 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTE05N08E3 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
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5 / 8 page  CYStech Electronics Corp. Spec. No. : C918E3 Issued Date : 2013.06.10 Revised Date : Page No. : 5/8 MTE05N08E3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 100000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 20 40 60 80 100 120 140 Total Gate Charge---Qg(nC) VDS=40V ID=20A Maximum Safe Operating Area 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100μs 10μs RDS(ON) Limit TC=25°C, Tj=175°C, VGS=10V,RθJC=0.45°C/W single pulse Maximum Drain Current vs Case Temperature 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) VGS=10V, RθJC=0.45°C/W Package limit Silicon limit |
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