IXTV26N60P datasheet(1/5 Pages) IXYS

Part #	IXTV26N60P

Description	PolarHV Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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G

D

S

G = Gate

D = Drain

S = Source

TAB = Drain

DS99376E(12/06)

PolarHVTM

Power MOSFET

V

DSS

= 600

V

I

D25

=26

A

R

DS(on) ≤

≤≤≤≤ 270 mΩ

Ω

N-Channel Enhancement Mode

Avalanche Rated

TO-3P (IXTQ)

G

D

S

D (TAB)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

600

V

GS(th)

V

DS = VGS, ID = 250 μA

3.0

5.0

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS = VDSS

10

μA

V

GS = 0 V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

270

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

600

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

600

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C26

A

I

DM

T

C = 25°C, pulse width limited by TJM

65

A

I

AR

T

C = 25°C13

A

E

AR

T

C = 25°C40

mJ

E

AS

T

C = 25°C

1.2

J

dv/dt

I

S ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS

10

V/ns

T

J ≤ 150°C, RG = 5 Ω

P

D

T

C = 25°C

460

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque (TO-3P&TO-247)

1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220)

11..65/2.5..15

N/lb

Weight

TO-3P

5.5

g

TO-247

6.0

g

TO-268

5.0

g

PLUS220 & PLUS220SMD

4.0

g

IXTH26N60P

IXTQ26N60P

IXTT26N60P

IXTV26N60P

IXTV26N60PS

TO-247 (IXTH)

G

S

D (TAB)

PLUS220SMD (IXTV_S)

G

S

D

PLUS220 (IXTV)

D (TAB)

Features

Fast Recovery diode

Unclamped Inductive Switching (UIS)

rated

International standard packages

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-268 (IXTT)

G

S

D (TAB)

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