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VS-FB190SA10 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VS-FB190SA10 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 93459 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 12-Apr-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET, 190 A VS-FB190SA10 Vishay Semiconductors FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance • Optimized for SMPS applications • Easy to use and parallel • Industry standard outline • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry. Notes (1) Repetitive rating; pulse width limited by maximum junction temperature. (2) Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A. (3) ISD 180 A, dI/dt 83 A/μs, VDD V(BR)DSS, TJ 150 °C. PRODUCT SUMMARY VDSS 100 V ID DC 190 A RDS(on) 0.0065 Type Modules - MOSFET Package SOT-227 SOT-227 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Continuous drain current at VGS 10 V ID TC = 40 °C 190 A TC = 100 °C 130 Pulsed drain current IDM 720 Power dissipation PD TC = 25 °C 568 W Linear derating factor 2.7 W/°C Gate to source voltage VGS ± 20 V Single pulse avalanche energy EAS (2) 700 mJ Avalanche current IAR (1) 180 A Repetitive avalanche energy EAR (1) 48 mJ Peak diode recovery dV/dt dV/dt (3) 5.7 V/ns Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C Insulation withstand voltage (AC-RMS) VISO 2.5 kV Mounting torque M4 screw 1.3 Nm |
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