VS-FB190SA10 datasheet(1/9 Pages) VISHAY

Part #	VS-FB190SA10

Description	Power MOSFET, 190 A

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 93459

For technical questions, contact: indmodules@vishay.com

www.vishay.com

Revision: 12-Apr-11

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET, 190 A

VS-FB190SA10

Vishay Semiconductors

FEATURES

• Fully isolated package

• Very low on-resistance

• Fully avalanche rated

• Dynamic dV/dt rating

• Low drain to case capacitance

• Low internal inductance

• Optimized for SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

High current density power MOSFETs are paralleled into a

compact,

high

power

module

providing

the

best

combination of switching, ruggedized design, very low

on-resistance and cost effectiveness.

The isolated SOT-227 package is preferred for all

commercial-industrial applications at power dissipation

levels to approximately higher than 500 W. The low thermal

resistance and easy connection to the SOT-227 package

contribute to its universal acceptance throughout the

industry.

Notes

(1) Repetitive rating; pulse width limited by maximum junction temperature.

(2) Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A.

(3) ISD  180 A, dI/dt  83 A/μs, VDD  V(BR)DSS, TJ  150 °C.

PRODUCT SUMMARY

VDSS

100 V

ID DC

190 A

RDS(on)

0.0065



Type

Modules - MOSFET

Package

SOT-227

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Continuous drain current at VGS 10 V

ID

TC = 40 °C

190

A

TC = 100 °C

130

Pulsed drain current

IDM

720

Power dissipation

PD

TC = 25 °C

568

W

Linear derating factor

2.7

W/°C

Gate to source voltage

VGS

± 20

V

Single pulse avalanche energy

EAS (2)

700

mJ

Avalanche current

IAR (1)

180

A

Repetitive avalanche energy

EAR (1)

48

mJ

Peak diode recovery dV/dt

dV/dt (3)

5.7

V/ns

Operating junction and storage temperature range

TJ, TStg

- 55 to + 150

°C

Insulation withstand voltage (AC-RMS)

VISO

2.5

kV

Mounting torque

M4 screw

1.3

Nm

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