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SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 ° 8 ° All Dimensions in mm DS30048 Rev. 3 - 2 1 of 2 MMBT6427 www.diodes.com MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR · Epitaxial Planar Die Construction · Ideal for Medium Power Amplification and Switching · High Current Gain Characteristic Symbol MMBT6427 Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 12 V Collector Current - Continuous (Note 1) IC 500 mA Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W Operating and Storage and Temperature Range Tj,TSTG -55 to +150 °C Features Maximum Ratings @ TA = 25 °C unless otherwise specified A C B E J L TOP VIEW M B C H G D K E Mechanical Data · Case: SOT-23, Molded Plastic · Case material - UL Flammability Rating Classification 94V-0 · Moisture sensitivity: Level 1 per J-STD-020A · Terminals: Solderable per MIL-STD-202, Method 208 · Terminal Connections: See Diagram · Marking (See Page 2): K1D · Ordering & Date Code Information: See Page 2 · Weight: 0.008 grams (approx.) Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO 40 ¾ V IC = 100 mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 100mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 12 ¾ V IE = 10 mA, IC = 0 Collector Cutoff Current ICBO ¾ 50 nA VCB = 30V, IE = 0 Collector Cutoff Current ICEO ¾ 1.0 mA VCE = 25V, IB = 0 Emitter Cutoff Current IEBO ¾ 50 nA VEB = 10V, IC = 0 ON CHARACTERISTICS (Note 2) DC Current Gain hFE 10,000 20,000 14,000 100,000 200,000 140,000 ¾ IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 500mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 1.2 1.5 V IC = 50mA, IB = 0.5mA IC = 500mA, IB = 0.5mA Base- Emitter Saturation Voltage VBE(SAT) ¾ 2.0 V IC = 500mA, IB = 0.5mA Base- Emitter On Voltage VBE(ON) ¾ 1.75 V IC = 50mA, VCE =5.0V SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8.0 Typical pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 15 Typical pF VEB = 0.5V, f = 1.0MHz, IC = 0 Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. E B C |
