MMBT5401 datasheet(1/2 Pages) DIODES

Part #	MMBT5401

Description	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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DS30057 Rev. 3 - 2

1 of 2

MMBT5401

www.diodes.com

MMBT5401

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·

Epitaxial Planar Die Construction

·

Complementary NPN Type Available

(MMBT5551)

·

Ideal for Medium Power Amplification and

Switching

Characteristic

Symbol

MMBT5401

Unit

Collector-Base Voltage

VCBO

-160

V

Collector-Emitter Voltage

VCEO

-150

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current - Continuous (Note 1)

IC

-200

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

417

°C/W

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

A

E

J

L

TOP VIEW

M

B C

C

B

E

H

G

D

K

Mechanical Data

·

Case: SOT-23, Molded Plastic

·

Case material - UL Flammability Rating

Classification 94V-0

·

Moisture sensitivity: Level 1 per J-STD-020A

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking (See Page 2): K4M

·

Ordering & Date Code Information: See Page 2

·

Weight: 0.008 grams (approx.)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

a

0

°

8

°

All Dimensions in mm

E

B

C

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V(BR)CBO

-160

¾

V

IC = -100

mA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-150

¾

V

IC = -1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5.0

¾

V

IE = -10

mA, IC = 0

Collector Cutoff Current

ICBO

¾

-50

nA

mA

VCB = -120V, IE = 0

VCB = -120V, IE = 0, TA = 100

°C

Emitter Cutoff Current

IEBO

¾

-50

nA

VEB = -3.0V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

50

60

50

¾

240

¾

IC = -1.0mA, VCE = -5.0V

IC = -10mA, VCE = -5.0V

IC = -50mA, VCE = -5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

-0.2

-0.5

V

IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA

Base- Emitter Saturation Voltage

VBE(SAT)

¾

-1.0

V

IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

¾

6.0

pF

VCB = -10V, f = 1.0MHz, IE = 0

Small Signal Current Gain

hfe

40

200

¾

VCE = -10V, IC = -1.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product

fT

100

300

MHz

VCE = -10V, IC = -10mA,

f = 100MHz

Noise Figure

NF

¾

8.0

dB

VCE = -5.0V, IC = -200

mA,

RS = 10

W, f = 1.0kHz

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

Electrical Characteristics @ TA = 25°C unless otherwise specified

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