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MBR10200CT Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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MBR10200CT Datasheet(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
1 / 2 page Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC TO-220A molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBR 1030 CT MBR 1035 CT MBR 1040 CT MBR 1045 CT MBR 1050 CT MBR 1060 CT MBR 1010 0CT MBR 1015 0CT MBR 1020 0CT Units Maximum Recurrent Peak Reverse Voltage VRRM 30 35 40 45 50 60 100 150 200 V Maximum RMS Voltage VRMS 21 24 28 31 35 42 70 105 140 V Maximum DC Blocking Voltage VDC 30 35 40 45 50 60 100 150 200 V Maximum Average Forward Rectified Current at Tc=125 OC I(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=125 oC IFRM 32 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 120 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 0.5 A Maximum Instantaneous Forward Voltage at: (Note 2) IF=5A, TC=25 oC IF=5A, TC=125 oC VF 0.70 0.57 0.80 0.65 0.82 0.72 0.84 0.74 0.86 0.76 V Maximum Instantaneous Reverse Current @ Tc =25 ℃ at Rated DC Blocking Voltage (Note 2) IR 0.1 0.8 0.2 mA Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS Maximum Typical Thermal Resistance (Note 3) R θJC 1.5 ℃/W Operating Junction Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +175 ℃ Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate. http://www.luguang.cn mail:lge@luguang.cn MBR1030CT THRU MBR10200CT 1 3 2 PIN 10.2± 0.2 4.0± 0.3 2.6± 0.15 1.4± 0.1 0.6± 0.1 4.5± 0.2 3.1 +0.2 -0.1 2.6± 0.2 0.6± 0.1 ITO-220AB Dimensions in millimeters |
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