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MBR1030CT Datasheet(PDF) 1 Page - Diodes Incorporated |
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MBR1030CT Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 2 page D S30027 Rev. A-2 1 of 2 MBR1030CT-MBR1060CT MBR1030CT - MBR1060CT 10A SCHOTTKY BARRIER RECTIFIER Features L M A N P D E K C B G 12 3 J HH Pin 1 Pin 3 Pin 2 Case TO-220AB Dim Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E ¾ 6.35 G 12.70 14.73 H 2.29 2.79 J 0.51 1.14 K 3.53 Æ 4.09Æ L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications · Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data · Case: Molded Plastic · Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 · Polarity: As Marked on Body · Weight: 2.24 grams (approx.) · Mounting Position: Any · Marking: Type Number Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol MBR 1030CT MBR 1035CT MBR 1040CT MBR 1045CT MBR 1050CT MBR 1060CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 35 40 45 50 60 V RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current (Note 1) @ TC = 105 °C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 125 A Repetitive Peak Reverse Surge Current @ t £ 2.0ms IRRM 1.0 A Forward Voltage Drop @ IF = 5.0A, TC = 125 °C @ IF = 5.0A, TC = 25 °C @ IF = 10A, TC = 25 °C VFM 0.57 0.70 0.84 0.70 0.80 0.95 V Peak Reverse Current @ TC = 25 °C at Rated DC Blocking Voltage @ TC = 125 °C IRM 0.1 15 mA Typical Junction Capacitance (Note 2) Cj 150 pF Typical Thermal Resistance Junction to Case (Note 1) RqJC 30 K/W Voltage Rate of Change (Rated VR) dV/dt 1000 V/ ms Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. |
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