CYStech Electronics Corp.

Spec. No. : C862G6

Issued Date : 2012.08.15

Revised Date : 2012.11.21

Page No. : 2/13

MTC8959G6

CYStek Product Specification

°C)

Limits

Parameter

Symbol

N-channel P-channel

Unit

Drain-Source Breakdown Voltage

100

-100

V

Gate-Source Voltage

±

20

±

20

V

1.4

-1.1

A

Continuous Drain

1.1

-0.88

A

5.6

-4.4

A

Pd

1.25

W

Linear Derating Factor

0.01

W /

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Rth,ja

100

°C/W

Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180

°C/W when mounted on minimum copper pad

2.

Pulse width limited by maximum junction temperature

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

100

-

-

V

1

1.9

2.5

V

-

-

±100

nA

-

-

1

μA

-

-

10

μA

°C

-

280

420

-

295

450

m

Ω

-

2.5

-

S

Dynamic

Ciss

-

545

-

Coss

-

14

-

Crss

-

11

-

pF

-

9

-

-

26

-

-

39

-

-

9

-

ns

*Qg

-

6.8

-

*Qgs

-

1.4

-

*Qgd

-

2.4

-

nC

Source-Drain Diode

-

0.77

1.2

V

*trr

-

15

-

ns

*Qrr

-

8

-

nC

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%