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MTC8959G6 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTC8959G6 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 13 page CYStech Electronics Corp. Spec. No. : C862G6 Issued Date : 2012.08.15 Revised Date : 2012.11.21 Page No. : 2/13 MTC8959G6 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown Voltage BVDSS 100 -100 V Gate-Source Voltage VGS ± 20 ± 20 V TA=25°C ,VGS=10V(N-CH), VGS=-10V(P-CH) ID 1.4 -1.1 A Continuous Drain Current (Note 1) TA=70°C, VGS=10V(N-CH), VGS=-10V(P-CH) ID 1.1 -0.88 A Pulsed Drain Current (Note 2) IDM 5.6 -4.4 A Pd 1.25 W Total Power Dissipation (Note 1) Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 100 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180 °C/W when mounted on minimum copper pad 2. Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0, ID=250μA VGS(th) 1 1.9 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0 IDSS - - 1 μA VDS=80V, VGS=0 IDSS - - 10 μA VDS=80V, VGS=0, Tj=70 °C - 280 420 VGS=10V, ID=1.4A *RDS(ON) - 295 450 m Ω VGS=4.5V, ID=1A *GFS - 2.5 - S VDS=10V, ID=1.4A Dynamic Ciss - 545 - Coss - 14 - Crss - 11 - pF VDS=30V, VGS=0, f=1MHz *td(ON) - 9 - *tr - 26 - *td(OFF) - 39 - *tf - 9 - ns VDS=50V, ID=1A, VGS=10V, RG=10Ω *Qg - 6.8 - *Qgs - 1.4 - *Qgd - 2.4 - nC VDS=50V, ID=1.4A, VGS=10V Source-Drain Diode *VSD - 0.77 1.2 V VGS=0V, IS=1A *trr - 15 - ns *Qrr - 8 - nC IS=1A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% |
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