MTC8404V8 datasheet(2/12 Pages) CYSTEKEC

Part #	MTC8404V8

Description	P-Channel Logic Level Enhancement Mode MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C914V8

Issued Date : 2013.09.30

Revised Date :

Page No. : 2/12

MTC8404V8

CYStek Product Specification

Absolute Maximum Ratings (TC=25

°C, unless otherwise noted)

Limits

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Breakdown Voltage

BVDSS

30

-30

Gate-Source Voltage

VGS

±

20

±

20

V

TA=25

°C, VGS=10V (-10V)

6

-6

Continuous Drain Current *2

TA=70

°C, VGS=10V (-10V)

ID

4.8

-4.8

Pulsed Drain Current

* 1

IDM

30

-30

Single device operation

1.5 *2

Total Power Dissipation

Single device value at dual operation

PD

1.24 *2

A

Operating Junction and Storage Temperature Range

Tj; Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol Value

Unit

Max. Thermal Resistance, Junction-to-ambient, single device operation

84 *2 °C/W

Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation

Rth,j-a

101 *2 °C/W

Note : 1. Pulse width limited by maximum junction temperature.

2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice Rth,j-a will be determined by customer’s PCB characteristics.

216°C/W when mounted on a minimum pad of 2 oz. copper.

N-Channel Electrical Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

30

-

VGS=0V, ID=250μA

VGS(th)

1

1.8

2.5

V

VDS=VGS, ID=250μA

IGSS

-

±100

nA

VGS=±20V, VDS=0V

-

1

VDS=30V, VGS=0V

IDSS

-

10

μA

VDS=24V, VGS=0V, Tj=70

°C

-

16

23

VGS=10V, ID=6A

*RDS(ON)

-

28

40

m

Ω

VGS=4.5V, ID=4A

*GFS

-

7

-

S

VDS=5V, ID=6A

Dynamic

Ciss

-

758

-

Coss

-

55

-

Crss

-

61

-

pF

VDS=20V

, VGS=0V, f=1MHz

*td(ON)

-

8

-

*tr

-

7

-

*td(OFF)

-

24

-

*tf

-

13

-

ns

VDS=15V

, ID=1A, VGS=10V, RG=6Ω

*Qg

-

11

-

*Qgs

-

2.9

-

*Qgd

-

3.2

-

nC

VDS=15V

, ID=6A, VGS=10V

Body Diode

*VSD

-

0.78

1.2

V

VGS=0V, IS=2.3A

*trr

-

29

-

ns

*Qrr

-

10

-

nC

IS=5A, VGS=0V, dI/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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