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MTC4506J4 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTC4506J4
Description  N & P-Channel Enhancement Mode Power MOSFET
Download  13 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTC4506J4 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C780J4
Issued Date : 2014.01.16
Revised Date :
Page No. : 4/13
MTC4506J4
CYStek Product Specification
Q1, N-CH Typical Characteristics
Typical Output Characteristics
0
5
10
15
20
25
30
012
345
VDS, Drain-Source Voltage(V)
3V
VGS=2V
10V, 9V, 8V, 7V, 6V, 5V,4V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS=10V
VGS=2.5V
VGS=3V
VGS=4.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02468
1
IDR, Reverse Drain Current(A)
0
Tj=25°C
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
10
20
30
40
50
60
70
80
90
100
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=10V, ID=5A
RDS(ON)@Tj=25°C : 25.5mΩ typ.
VGS, Gate-Source Voltage(V)
ID=5A


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