MTC1016S6R datasheet(2/12 Pages) CYSTEKEC

Part #	MTC1016S6R

Description	P-Channel Logic Level Enhancement Mode MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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2 / 12 page

CYStech Electronics Corp.

Spec. No. : C392S6R

Issued Date : 2013.08.01

Revised Date :

Page No. : 2/ 12

MTC1016S6R

CYStek Product Specification

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)

Rth,ja

415

°C/W

Note : Surface mounted on minimum pad of FR-4 board, t≤5s.

N-Channel Electrical Characteristics (Tj=25

°C, unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

20

-

VGS=0, ID=250μA

VGS(th)

0.5

0.8

1.2

V

VDS=VGS, ID=250μA

IGSS

-

±

5

VGS=±8V, VDS=0

-

1

VDS=20V, VGS=0

IDSS

-

10

μA

VDS=16V, VGS=0 (Tj=70°C)

-

0.30

0.40

VGS=4.5V, ID=600mA

-

0.43

0.56

VGS=2.5V, ID=400mA

*RDS(ON)

-

0.63

0.82

Ω

VGS=1.8V, ID=350mA

*GFS

-

1.1

-

S

VDS=10V, ID=400mA

Dynamic

Ciss

-

58.5

-

Coss

-

12.3

-

Crss

-

7.8

-

pF

VDS=16V, VGS=0, f=1MHz

td(ON)

-

6

-

tr

-

6

-

td(OFF)

-

26

-

tf

-

20

-

ns

VDS=10V, ID=250mA, VGS=4.5V, RG=10Ω

Qg

-

0.79

-

Qgs

-

0.09

-

Qgd

-

0.27

-

nC

VDS=10V, ID=250mA, VGS=4.5V

Source-Drain Diode

*IS

-

0.82

*ISM

-

3.4

A

*VSD

-

0.75

1.0

V

VGS=0V, IS=150mA

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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