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OPA694IDBVR Datasheet(PDF) 3 Page - Texas Instruments |
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OPA694IDBVR Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 28 page  OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 ELECTRICAL CHARACTERISTICS: VS = ±5V Boldface limits are tested at +25°C. At RF = 402Ω, RL = 100Ω, and G = +2V/V, unless otherwise noted. OPA694ID, IDBV MIN/MAX OVER TYP TEMPERATURE 0°C to +70°C( -40°C to MIN/ TEST PARAMETER TEST CONDITIONS +25°C +25°C(2) 3) +85°C(3) UNIT MAX LEVELS(1) AC Performance (see Figure 31) Small-Signal Bandwidth G = +1, VO = 0.5VPP, RF = 430Ω 1500 MHz typ C G = +2, VO = 0.5VPP, RF = 402Ω 690 350 340 330 MHz min B G = +5, VO = 0.5VPP, RF = 318Ω 250 200 180 160 MHz min B G = +10, VO = 0.5VPP, RF = 178Ω 200 150 130 120 MHz min B Bandwidth for 0.1dB Gain Flatness G = +1, VO = 0.5VPP, RF = 430Ω 90 MHz typ C Peaking at a Gain of +1 VO ≤ 0.1VPP, RF = 430Ω 2 dB typ C Large-Signal Bandwidth G = +2, VO = 2VPP 675 MHz typ C Slew Rate G = +2, 2V Step 1700 1300 1275 1250 V/ms min B Rise Time and Fall Time G = +2, VO = 0.2V Step 0.8 ns typ C Settling Time to 0.01% G = +2, VO = 2V Step 20 ns typ C Settling Time to 0.1% G = +2, VO = 2V Step 13 ns typ C Harmonic Distortion G = +2, f = 5MHz, VO = 2VPP — — — xx x 2nd-Harmonic RL = 100Ω –68 –63 –62 –61 dBc max B RL ≥ 500Ω –92 –87 –85 –83 dBc max B xx x 3rd-Harmonic RL = 100Ω –72 –69 –67 –66 dBc max B RL ≥ 500Ω –93 –88 –86 –84 dBc max B Input Voltage Noise Density f > 1MHz 2.1 2.4 2.8 3.0 nV/ √Hz max B Inverting Input Current Noise Density f > 1MHz 22 24 26 28 pA/ √Hz max B Noninverting Input Current Noise f > 1MHz 24 26 28 30 pA/ √Hz max B Density NTSC Differential Gain VO - 1.4VPP, RL = 150Ω 0.03 % max C VO - 1.4VPP, RL = 37.5Ω 0.05 % max C NTSC Differential Phase G = +2, VO - 1.4VPP, RL = 150Ω 0.015 ° typ C VO - 1.4VPP, RL = 37.5Ω 0.16 ° typ C DC PERFORMANCE(4) Open-Loop Transimpedance VO = 0V, RL = 100Ω 145 90 65 60 k Ω min A Input Offset Voltage VCM = 0V ±0.5 ±3.0 ±3.7 ±4.1 mV max A Average Input Offset Voltage Drift VCM = 0V 12 15 mV/°C max B Noninverting Input Bias Current VCM = 0V ±5 ±20 ±26 ±31 mA max A Average Input Bias Current Drift VCM = 0V ±100 ±150 nA/°C max B Inverting Input Bias Current VCM = 0V ±2 ±18 ±26 ±38 mA max A Average Input Bias Current Drift VCM = 0V ±150 ±200 nA/°C max B INPUT Common-mode Input Voltage(5) ±2.5 ±2.3 ±2.2 ±2.1 V min A (CMIR) Common-Mode Rejection Ratio VCM = 0V 60 55 53 51 dB min A (CMRR) Noninverting Input Impedance 280 | | 1.2 k Ω | | pF typ C Inverting Input Resistance Open-Loop 30 Ω typ C (1) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (2) Junction temperature = ambient for +25°C specifications. (3) Junction temperature = ambient at low temperature limits; junction temperature = ambient +9°C at high temperature limit for over temperature specifications. (4) Current is considered positive out of node. VCM is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits. Copyright © 2004–2010, Texas Instruments Incorporated 3 Product Folder Link(s): OPA694 |
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