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10A4 Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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10A4 Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 2 page Features • Low cost • Diffused junction • Low forward voltage drop • Low reverse leakage current • High current capability • The plastic material carries UL recognition 94V-0 Mechanical Data • Case: JEDEC R-6 molded plastic • Polarity: Color band denotes cathode • Mounting position: Any Absolute Maximum Ratings and Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.. For capacitive load, derate current by 20%. Symbols 10A05 10A1 10A2 10A4 10A6 10A8 10A10 Units Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts Maximum average forward rectified current @TA=50 CIF(AV) 10 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 600 Amps Maximum forward voltage at 10A DC VF 1 Volts Maximum DC reverse current @TJ = 25 C at rated DC blocking voltage @TJ = 100 C IR 10 100 µA Typical junction capacitance (Note 1) CJ 150 pF Typical thermal resistance (Note 2) RθJA 10 C/W Operating temperature range TJ -55 to+125 C Storage temperature range TS -55 to+150 C Notes: 1. Measured at 1 MHZ and applied reverse voltage of 4V D.C. 2. Thermal Resistance Junction to Ambient. ® 10A05 thru 10A10 Pb Free Plating Product 10A05 thru 10A10 10.0 Ampere Plastic Silicon General Purpose Rectifier Diodes Pb Dimensions in inches and (millimeters) R - 6 2100 .360(9.1) .340(8.6) .052(1.3) .048(1.2) DIA .360(9.1) .340(8.6) DIA 1.0(25.4) MIN 1.0(25.4) MIN © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Rev.04 o o o o o o o |
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