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HER1003GD Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # HER1003GD
Description  10.0 Ampere Heatsink Dual Doubler Tandem High Efficiency Rectifiers
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

HER1003GD Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  HER1003GD Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. HER1003GD Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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Features
Low forward voltage drop
Fast switching for high efficiency
High current capability
Case: Heatsink TO-220AB
High surge current capability
Weight: 2.1 gram approxiamtely
Polarity: As marked on diode body
method 208
Mounting position: Any
Terminals: Solderable per MIL-STD-202
Mechanical Data
Low reverse leakage current
Epoxy: UL 94V-0 rate flame retardant
®
HER1001GD thru HER1008GD
Pb Free Plating Product
HER1001GD thru HER1008GD
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 1/2
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Pb
Rev.04/2014
10.0 Ampere Heatsink Dual Doubler Tandem High Efficiency Rectifiers
.196(5.00)
.054(1.39)
.038(0.96)
.419(10.66)
.139(3.55)
MIN
.163(4.16)
.045(1.15)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
.387(9.85)
TO-220AB
Unit : inch (mm)
Positive
Negative
Doubler
Common Cathode
Case
Case
Case
Common Anode
Tandem Polarity
Suffix "GA"
Suffix "GD"
Suffix "G"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
HER
1001GD
HER
1002GD
HER
1003GD
HER
1004GD
HER
1005GD
HER
1006GD
HER
1007GD
HER
1008GD
Units
VRRM
50
100
200
300
400
600
800
1000
V
VRMS
35
70
140
210
280
420
560
700
V
VDC
50
100
200
300
400
600
800
1000
V
uA
uA
Trr
nS
Cj
pF
RθJC
TJ
TSTG
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
Type Number
40
60
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
50
Typical Thermal Resistance
10
80
400
- 65 to + 150
Typical Junction Capacitance (Note 3)
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
1.5
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Operating Temperature Range
Storage Temperature Range
- 65 to + 150
Maximum Reverse Recovery Time (Note 2)
Maximum DC Reverse Current
@ TA=25 ℃
at Rated DC Blocking Voltage
@ TA=125 ℃
IR
Maximum Average Forward Rectified Current
IF(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
125
A
1.7
V
Maximum Instantaneous Forward Voltage (Note 1)
@ 5 A
VF
1.0
1.3
℃/W


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