US1J datasheet(2/2 Pages) THINKISEMI

Part #	US1J

Description	1.0 Ampere Surface Mount Type Ultra Fast Recovery Rectifier Diode

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Manufacturer	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Direct Link	http://www.thinkisemi.com

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FIG.3- TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

0.6

0.8

1.0

0.4

1.2

1.4

1.6

1.8

0.01

0.001

1

RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M)

FIG.1- MAXIMUM FORWARD CURRENT DERATING

CURVE

60

80

100

120

140

160

0

0.5

1.0

1.2

LEAD TEMPERATURE. ( C)

o

FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

1

10

100

0

40

10

20

30

50

NUMBER OF CYCLES AT 60Hz

TL=90 C

8.3ms Single Half Sine Wave

JEDEC Method

0

FIG.4- TYPICAL REVERSE CHARACTERISTICS

RESISTIVE OR

INDUCTIVE LOAD

P.C.B. MOUNTED ON 0.2 X 0.2"

(5.0X5.0mm) COPPER PAD AREAS

40

20

0

180

Pulse Width=300 s

1% Duty Cycle

0.1

10

US1A - US1G

US1J - US1M

FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE

1

0.01

0.1

10

100

0.1

10

1

100

T, PULSE DURATION, sec.

FIG.5- TYPICAL JUNCTION CAPACITANCE

0.1

1

10

100

10

100

REVERSE VOLTAGE. (V)

Tj=25 C

f=1.0MHz

Vsig=50mVp-p

0

US1A - US1G

US1J - US1M

FORWARD VOLTAGE. (V)

1

20

40

60

80

100

120

0.1

1

10

100

1000

PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

Tj=25 C

0

Tj=100 C

0

140

®

US1A thru US1M

http://www.thinkisemi.com/

Page 2/2

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