BS850 datasheet(2/3 Pages) DIODES

Part #	BS850

Description	P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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DS11402 Rev. F-3

2 of 3

BS850

Electrical Characteristics @ TA = 25°C unless otherwise specified

Notes:

1. Device mounted on ceramic substrate 0.7mm; 2.5 cm2 area.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

-V(BR)DSS

60

90

—

V

-ID = 100µA, VGS = 0

Gate Threshold Voltage

VGS(th)

—

1.0

3.0

V

-VGS =VDS, –ID = 1.0mA

Gate-Body Leakage Current

-IGSS

—

10

nA

-VGS = 15V, VDS = 0

Drain-Source Cutoff Current

-IDSS

—

0.5

µA

-VDS = 25V, VGS = 0

Drain-Source ON Resistance

rDS (ON)

—

3.5

5.0

W

-VGS = 10V, –ID = 0.2A

Thermal Resistance, Junction to Ambient Air

RqJA

—

400

K/W

Note 1

Thermal Resistance Junction to

Substrate Backside

RqJSB

—

320

K/W

Note 1

Forward Transconductance

gFS

—

200

—

m

-VDS = 10V, –ID = 0.2A,

f = 1.0MHz

Input Capacitance

Ciss

—60—

pF

-VDS = 10V, VGS=0, f = 1.0MHz

Switching Times

Turn On Time

Turn Off Time

ton

toff

—

5.0

25

—ns

-VGS = 10V, –VDS = 10V,

RD = 100

W

DISCONTINUED,

FOR NEW DESIGN

USE BSS84

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