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BS850 Datasheet(PDF) 2 Page - Diodes Incorporated |
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BS850 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 3 page DS11402 Rev. F-3 2 of 3 BS850 Electrical Characteristics @ TA = 25°C unless otherwise specified Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5 cm2 area. Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage -V(BR)DSS 60 90 — V -ID = 100µA, VGS = 0 Gate Threshold Voltage VGS(th) — 1.0 3.0 V -VGS =VDS, –ID = 1.0mA Gate-Body Leakage Current -IGSS — — 10 nA -VGS = 15V, VDS = 0 Drain-Source Cutoff Current -IDSS — — 0.5 µA -VDS = 25V, VGS = 0 Drain-Source ON Resistance rDS (ON) — 3.5 5.0 W -VGS = 10V, –ID = 0.2A Thermal Resistance, Junction to Ambient Air RqJA — — 400 K/W Note 1 Thermal Resistance Junction to Substrate Backside RqJSB — — 320 K/W Note 1 Forward Transconductance gFS — 200 — m m -VDS = 10V, –ID = 0.2A, f = 1.0MHz Input Capacitance Ciss —60— pF -VDS = 10V, VGS=0, f = 1.0MHz Switching Times Turn On Time Turn Off Time ton toff — 5.0 25 —ns -VGS = 10V, –VDS = 10V, RD = 100 W DISCONTINUED, FOR NEW DESIGN USE BSS84 |
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